Beilstein J. Nanotechnol.2020,11, 1644–1654, doi:10.3762/bjnano.11.147
read DC sweeps was applied. When a post-reset voltage pulse with sufficient amplitude was applied to a given cell, the measured current and the post-pulse resistance increased drastically, indicating that the cell re-amorphized after thresholdswitching, melting, and quenching. The amorphized length
was calculated using the measured voltage at which the thresholdswitching occurred and the expected drifted threshold field at that time. The measured threshold voltage values and, hence, the extracted amorphized length, generally increase linearly with the programmed resistance levels. However
unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications.
Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; thresholdswitching; Introduction
Phase-change
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Figure 1:
Schematic of the procedure used in this work for extraction of amorphized length in phase-change me...